计算机术语总结之RAM & ROM类

abp: address bit permuting，地址位序列改变
" l( }5 M5 L$ G# q, k2 S8 [atc(access time from clock，时钟存取时间)4 G+ @1 r, ~6 D3 k2 ], U
bsram(burst pipelined synchronous static ram，突发式管道同步静态存储器) ' B$ b3 c+ d+ f
cas(column address strobe，列地址控制器). z  L! [0 k3 W# }8 i  K
cct(clock cycle time，时钟周期)! B2 I9 O  A4 L/ o2 |4 \
db: deep buffer(深度缓冲)
( D& Z1 M& b4 [' b: _ddr sdram(double date rate，双数据率sdram)/ t" }* c' R5 w. l. @: C* G
dil(dual-in-line)
7 m8 L5 m, A$ z$ b! M3 u/ wdimm(dual in-line memory modules，双重内嵌式内存模块)
& W! [+ |/ b5 U+ q5 P3 e% Sdram(dynamic random access memory，动态随机存储器)
4 F4 z) R  e1 V  p8 W' V0 {. M& Gdrdram(direct rambus dram，直接rambus内存)
2 W& \9 h& K9 E* \: T" s3 _3 p& Zecc(error checking and correction，错误检查修正)
! ~+ H# v( E, p& `& X( K' deeprom(electrically erasable programmable rom，电擦写可编程只读存储器)3 C% l% U8 u) Z+ T0 \. u  y
fm: flash memory(快闪存储器)3 D. d' s- g6 h
fmd rom (fluorescent material read only memory，荧光质只读存储器)' z* \! n7 x$ s; ^
pirom：processor information rom，处理器信息rom- _' i# Q0 w0 ^3 |5 M7 F% G
pledm: phase-state low electron(hole)-number drive memory
. x# s5 h5 H. K2 ~1 M) f5 eqbm(quad band memory，四倍边带内存)
6 I# b6 R0 ?# ]% u5 p8 hrac(rambus asic cell，rambus集成电路单元)
# N" ~1 x1 G$ i& ]5 s; q- x; Sras(row address strobe，行地址控制器). S. b3 I; `  O% o( L, Q9 n
rdram(rambus direct ram，直接型rambusram)
( i; P1 Y; l% w: irimm(rambus in-line memory modules，rambus内嵌式内存模块)
% _, C  `' ?% Q/ r* a$ Q1 T! x% [sdr sdram(single date rate，单数据率sdram)$ H$ G7 e/ L4 a, C* u$ v
sgram(synchronous graphics ram，同步图形随机储存器)- _! O; t# _; n$ L6 f5 W
so-dimm(small outline dual in-line memory modules，小型双重内嵌式内存模块)
$ {" O# f+ n: I2 [2 M# D! h. Vspd(serial presence detect，串行存在检查)
' v% W, k+ i. |* U, ksram(static random access memory，静态随机存储器)
7 W# C7 k8 c$ J/ l+ U) p8 xsstl-2(stub series terminated logic-2)* R% y* k$ J' P5 }& K  L0 \
tsops(thin small outline packages，超小型封装)
. n* T1 Y& t+ v$ Huswv(uncacheable， speculative， write-combining非缓冲随机混合写入): w# ^5 Z0 b& q
vcma(virtual channel memory architecture，虚拟通道内存结构)